HGCB4A401200 SIC Inverter (H-Bridge) Circuit Block
The H-bridge consists of four ROHM-manufactured SiC-MOSFET units, forming a compact inverter about the size of a postcard. With a built-in gate drive circuit, it operates as a single-phase inverter at a maximum power of 4 kVA by inputting a gate signal. A version with four circuit blocks, a cooling mechanism, and a voltage sensor is also available.
Test System Features
- SiC H-Bridge Inverter
- A voltage sensor circuit is built in
SPECIFICATIONS
| TYPE OF TESTS | SPECIFICATIONS |
|---|---|
| Equipment Size | W:150mm / D:110mm / H:54mm : HGCB-4A-401200 |
| Weight | W: 162mm / D: 170mm / H: 246mm : HGCB-4x4A-401200 |
| DC Voltage Range | 0 V - 400 V : [DC+] - [DC-] terminal voltage |
| Dead-time | ≥ 200 ns |
| Switching Frequency | 200 kHz |
| Power Supply | DC24 V |
KEY FEATURES
| Gating Signal | 5 V TTL (negative) with 10 kΩ pull-down |
| Error Reset Signal | 5 V TTL (negative) with 10 kΩ pull-down |
| Error Signal | 5 V TTL (negative) with 10 kΩ pull-down |
| Error Signal (Error Link Function) | Error Sharing among multiple blocks to enable a synchronous stop (gate block) |
What we offer
The HGCB-4A-401200 SiC Inverter (H-Bridge) Circuit Block delivers high-efficiency power conversion using advanced Silicon Carbide (SiC) technology. Designed for optimal performance, it ensures precise control, reliability, and durability in demanding applications, making it ideal for electric vehicles and industrial systems requiring robust and efficient inverter solutions.
Our Related Products
Explore
Copyright © 2022 by Exeliq Tech Solutions
Designed by Trade4asia Pvt. Ltd.